1 transistor 2sc1359 silicon npn epitaxial planer type for high-frequency amplification complementary to 2sa0838 (2sa838) features optimum for rf amplification of fm/am radios. high transition frequency f t . absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector 3:base jedec:to?2 eiaj:sc?3a 5.0 0.2 4.0 0.2 5.1 0.2 13.5 0.5 0.45 +0.2 ?.1 0.45 +0.2 ?.1 1.27 1.27 2.3 0.2 2.54 0.15 2 13 symbol v cbo v ceo v ebo i c p c t j t stg ratings 30 20 5 30 400 150 ?5 ~ +150 unit v v v ma mw ?c ?c electrical characteristics (ta=25?c) parameter collector cutoff current forward current transfer ratio transition frequency noise figure reverse transfer impedance common emitter reverse transfer capacitance symbol i cbo h fe * f t nf z rb c re conditions v cb = 10v, i e = 0 v cb = 10v, i e = ?ma v cb = 10v, i e = ?ma, f = 200mhz v cb = 10v, i e = ?ma, f = 5mhz v cb = 10v, i e = ?ma, f = 2mhz v ce = 10v, i c = 1ma, f = 10.7mhz min 70 150 typ 250 2.8 22 0.9 max 0.1 220 4 50 1.5 unit a mhz db ? pf * h fe rank classification rank b c h fe 70 ~ 140 110 ~ 220 note.) the part number in the parenthesis shows conventional part number.
2 transistor 2sc1359 p c ta i c v ce i c i b i b v be i c v be v ce(sat) i c h fe i c f t i e z rb i e 0 160 40 120 80 140 20 100 60 0 500 400 300 200 100 450 350 250 150 50 ambient temperature ta ( ? c ) collector power dissipation p c ( mw ) 018 612 0 12 10 8 6 4 2 ta=25 ? c i b =100 a 20 a 40 a 60 a 80 a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 100 80 20 60 40 0 15.0 12.5 10.0 7.5 5.0 2.5 v ce =10v ta=25 ? c base current i b ( a ) collector current i c ( ma ) 0 1.0 0.8 0.2 0.6 0.4 0 120 100 80 60 40 20 v ce =10v ta=25 ? c base to emitter voltage v be ( v ) base current i b ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 60 50 40 30 20 10 v ce =10v ta=75 ? c 25 ? c 25 ? c base to emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=75 ? c 25 ? c 25 ? c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.3 3 30 0 240 200 160 120 80 40 v ce =10v ta=75 ? c 25 ? c 25 ? c collector current i c ( ma ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 0 400 300 100 250 350 200 50 150 ta=25 ? c v cb =10v 6v emitter current i e ( ma ) transition frequency f t ( mhz ) 0.1 0.3 1 3 10 0 60 50 40 30 20 10 v cb =10v f=2mhz ta=25 ? c emitter current i e ( ma ) reverse transfer impedance z rb ( ? )
3 transistor 2sc1359 c re v ce pg i e nf i e b ie g ie b re g re b fe g fe b oe g oe 0.1 1 10 100 0.3 3 30 0 3.0 2.5 2.0 1.5 1.0 0.5 f=10.7mhz ta=25 ? c i c =3ma 1ma collector to emitter voltage v ce ( v ) common emitter reverse transfer capacitance c re ( pf ) 0.1 1 10 100 0.3 3 30 0 24 20 16 12 8 4 f=100mhz v cb =10v ta=25 ? c emitter current i e ( ma ) power gain pg ( db ) 040 32 824 16 0 24 20 16 12 8 66 y ie =g ie +jb ie v ce =10v f=10.7mhz i e = 1ma 2ma 4ma 7ma 58 100 input conductance g ie ( ms ) input susceptance b ie ( ms ) 0.5 10 0.1 0.4 0.2 0.3 0.6 0 0.1 0.2 0.3 0.4 0.5 y re =g re +jb re v ce =10v f=10.7mhz i e = 1ma 58 100 reverse transfer conductance g re ( ms ) reverse transfer susceptance b re ( ms ) 0 100 80 20 60 40 120 0 20 40 60 80 100 y fe =g fe +jb fe v ce =10v f=10.7mhz 100 10.7 0.1ma 1ma 2ma i e = 4ma 100 100 58 58 58 forward transfer conductance g fe ( ms ) forward transfer susceptance b fe ( ms ) 0 0.5 0.4 0.1 0.3 0.2 0 1.2 1.0 0.8 0.6 0.4 0.2 y oe =g oe +jb oe v ce =10v f=10.7mhz i e = 1ma 58 100 output conductance g oe ( ms ) output susceptance b oe ( ms ) 0.1 0.3 1 3 10 0 12 10 8 6 4 2 v cb =6v f=100mhz r g =50 ? ta=25 ? c emitter current i e ( ma ) noise figure nf ( db )
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